A broadband transparent and flexible silver (Ag) mesh is presented experimentally for the first time for both efficient electromagnetic interference (EMI) shielding in the X band and high-quality free-space optical (FSO) communication. High transmission is achieved in a broad wavelength range of 0.4-2.0 µm. The transmittance of the Ag mesh relative to the substrate is around 92% and the sheet resistance is as low as 7.12 Ω/sq. The Ag mesh/polyethylene (PE) achieves a high average EMI shielding effectiveness (SE) of 28.8 dB in the X band with an overall transmittance of 80.9% at 550 nm. High-quality FSO communication with small power penalty is attributed to the high optical transmittance and the low haze at 1550 nm, superior to those of the Ag NW networks. With a polydimethylsiloxane (PDMS) coating, the average EMI SE is still up to 26.2 dB and the overall transmittance is increased to 84.5% at 550 nm due to antireflection. The FSO communication does not change much due to the nearly unchanged optical property at 1550 nm. Both the EMI shielding performance and the FSO communication function maintain after 2-hour chemical corrosions as well as after 1000 bending cycles and twisting. Our PDMS/Ag mesh/PE sandwiched film can be self-cleaned, suitable for outdoor applications.
We demonstrate experimentally a flexible crystalline silicon (c-Si) solar cell (SC) based on dopant-free interdigitated back contacts (IBCs) with thickness of merely 50 µm for, to the best of our knowledge, the first time. A MoOx thin film is proposed to cover the front surface and the power conversion efficiency (PCE) is boosted to over triple that of the uncoated SC. Compared with the four-time thicker SC, our thin SC is still over 77% efficient. Systematic studies show the front MoOx film functions for both antireflection and passivation, contributing to the excellent performance. A double-interlayer (instead of a previously-reported single interlayer) is identified at the MoOx/c-Si interface, leading to efficient chemical passivation. Meanwhile, due to the large workfunction difference, underneath the interface a strong built-in electric field is generated, which intensifies the electric field over the entire c-Si active layer, especially in the 50-µm thick layer. Photocarriers are expelled quickly to the back contacts with less recombined and more extracted. Besides, our thin IBC SC is highly flexible. When bent to a radius of 6 mm, its PCE is still 76.6% of that of the unbent cell. Fabricated with low-temperature and doping-free processes, our thin SCs are promising as cost-effective, light-weight and flexible power sources.
Greatly enhanced hole collection of MoOx is demonstrated experimentally with a top sub-10 nm thick Ag film. With this hole-selective contact, a 50 μm thick gridless c-Si solar cell, showing excellent flexibility, is 75% thinner but 86% efficient.
Anisotropic plasmonic films are a desirable material for many optoelectronic applications. Here, we propose a method to align silver nanowires (AgNWs) with the help of uniaxial nematic alignment of cellulose nanocrystal (CNC) liquid crystals (LCs) that can preserve their LC orientation in solid film. AgNWs are doped into uniaxial nematic CNC LCs, where AgNWs are oriented parallel to the director of shear- aligned CNCs without aggregation. The AgNWs orientations are determined by polarized optical and dark field microscopic images. The alignment of AgNWs is characterized by the scalar order parameter S, and the measured S around 0.59 for aligned AgNWs presents an improved anisotropy with the assistance of uniaxial nematic CNC LCs. The electrical property of aligned AgNWs is examined by the four-probe method and exhibits the maximum ratio of anisotropic sheet resistance around 5, consistent with the simulated percolation probability performance using the Monte Carlo computation. Our results show that the uniaxial nematic CNC LCs can act as an effective template in aligning AgNWs, which is compatible with 3D printing and microfluidics, and allows for the preparation of low-cost, innovative optical materials and devices.
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