Extremely thin (equivalent oxide thickness, Teq=1.2 nm) silicon-nitride high-k (εr=7.2) gate dielectrics have been formed at low temperatures (⩽550 °C) by an atomic-layer-deposition (ALD) technique with subsequent NH3 annealing at 550 °C. A remarkable reduction in leakage current, especially in the low dielectric voltage region, which will be the operating voltage for future technologies, has made it a highly potential gate dielectric for future ultralarge-scale integrated devices. Suppressed soft breakdown events are observed in ramped voltage stressing. This suppression is thought to be due to a strengthened structure of Si–N bonds and the smoothness and uniformity at the poly-Si/ALD-silicon-nitride interface.

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In this work, a compact transport model has been developed for monolayer transition metal dichalcogenide (TMDC) channel MOSFET. The analytical model solves the Poisson's equation for the inversion charge density to get the electrostatic potential in the channel. Current is then calculated by solving the drift-diffusion equation. The model makes gradual channel approximation to simplify the solution procedure. The appropriate density of states obtained from the first principle density functional theory simulation has been considered to keep the model physically accurate for monolayer TMDC channel FET. The outcome of the model has been benchmarked against both experimental and numerical quantum simulation results with the help of a few fitting parameters. Using the compact model, detailed output and transfer characteristics of monolayer WSe FET have been studied, and various performance parameters have been determined. The study confirms excellent ON and OFF state performances of monolayer WSe FET which could be viable for the next generation high-speed, low power applications. Also, the proposed model has been extended to study the operation of a biosensor. A monolayer MoS channel based dielectric modulated FET is investigated using the compact model for detection of a biomolecule in a dry environment.