Heterostructures based on layering of two-dimensional (2D) materials such as graphene and hexagonal boron nitride represent a new class of electronic devices. Realizing this potential, however, depends critically on the ability to make high-quality electrical contact. Here, we report a contact geometry in which we metalize only the 1D edge of a 2D graphene layer. In addition to outperforming conventional surface contacts, the edge-contact geometry allows a complete separation of the layer assembly and contact metallization processes. In graphene heterostructures, this enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-temperature mobility comparable to the theoretical phonon-scattering limit. The edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials.

Ballistic transport of electrons at room temperature in top-gated InAs nanowire (NW) transistors is experimentally observed and theoretically examined. From length dependent studies, the low-field mean free path is directly extracted as ~150 nm. The mean free path is found to be independent of temperature due to the dominant role of surface roughness scattering. The mean free path was also theoretically assessed by a method that combines Fermi's golden rule and a numerical Schrödinger-Poisson simulation to determine the surface scattering potential with the theoretical calculations being consistent with experiments. Near ballistic transport (~80% of the ballistic limit) is demonstrated experimentally for transistors with a channel length of ~60 nm, owing to the long mean free path of electrons in InAs NWs.

Nanoscale size effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied thicknesses of 5-50 nm. First, optical absorption studies are performed by transferring InAs "quantum membranes" (QMs) onto transparent substrates, from which the quantized sub-bands are directly visualized. These sub-bands determine the contact resistance of the system with the experimental values consistent with the expected number of quantum transport modes available for a given thickness. Finally, the effective electron mobility of InAs QMs is shown to exhibit anomalous field and thickness dependences that are in distinct contrast to the conventional MOSFET models, arising from the strong quantum confinement of carriers. The results provide an important advance toward establishing the fundamental device physics of two-dimensional semiconductors.

AbstractTransition-metal dichalcogenides (TMDCs) and black phosphorus (BP) are typical 2D materials with layer-dependent bandgaps, which are emerging as promising saturable absorption materials for pulsed fiber lasers. In this review, we discuss the nonlinear saturable absorption properties of TMDCs and BP, and summarize the recent progress of saturable absorbers from fabrication methods to incorporation strategies. The performances of saturable absorbers and the properties of Q-switched/mode-locked fiber lasers at different wavelengths are summarized and compared to give a comprehensive insight to optical modulators based on TMDCs/BP, and to promote their practical applications in nonlinear optics.

Edge contacts to graphene can offer excellent contact properties. Role of different chemical terminations is examined by using ab initio density functional theory and quantum transport simulations. It is found that edge termination by group VI elements O and S offers considerably lower contact resistance compared to H and group VII element F. The results can be understood by significantly larger binding energy and shorter binding distance between the metal contact and these group VI elements, which results in considerably lower interface potential barrier and larger transmission. The qualitative conclusion applies to a variety of contact metal materials.