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In this work, we propose the design and implementation of a 13.56 MHz GaN Class-E power amplifier, which takes into account transistor parasitic effects. The design uses the parasitic capacitance of the transistor to replace the charging capacitance, simplifying the circuit structure and obtaining a 93.6% efficiency at output power of 26.8 W. In addition, a wireless power transfer system using the proposed Class-E amplifier is demonstrated, achieving a 73.4% system efficiency when the power delivered to the load is 25.6 W. Index Terms -Power transmission, energy efficiency, power MOSFET, silicon carbide, gallium nitride, power amplifiers.

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This paper presents the design and implementation of an LED lighting module powered by a wireless power transfer system. The overall system achieves an efficiency of 82% with an output power of 36 W when the load resistance in the receiver is 30 Ω, which is the turn-on resistance of the LED lighting module. The transmitter of the system adopts Class-E power amplifier structure instead of Class-D, to decrease the number of transistors and its cost. The coils of the system are designed by electromagnetic coupling methodology and realized by Litz wire to reach high efficiency. Matching circuits between the system blocks are also discussed in this paper in order to obtain the excellent system performance.

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