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We have developed a Mach-Zehnder interferometric all-optical switch employing intersubband transition in an InGaAs∕AlAs∕AlAsSb-coupled double quantum well waveguide. The recently discovered cross-phase modulation phenomenon was utilized as the switching mechanism; the nonlinear index of refraction for transverse electric polarized light is induced by intersubband optical excitation using transverse magnetic pump light. We demonstrate the demultiplexing operation of 160Gbit∕s data signals to 10Gbit∕s using this switch. At the input control pulse energy of 8pJ, the demultiplexed signals showed an extinction ratio better than 10dB, and an error-free demultiplexing was achieved.

Vertical correlation of highly organized exciton complex at ZnSe / BeTe typeII asymmetric superlattices AIP Conf. Proc. 772, 967 (2005); 10.1063/1.1994431Structural study of (CdS/ZnSe)/BeTe superlattices for λ=1.55 μm intersubband transition

Articles you may be interested inMagnetic properties of heavily Mn-doped quaternary alloy ferromagnetic semiconductor (InGaMn)As grown on InP Appl. Phys. Lett. 83, 2175 (2003); 10.1063/1.1610788 Magnetic and transport properties of III-V based magnetic semiconductor (GaMn)As: Growth condition dependence Appl. Phys. Lett. 74, 398 (1999); 10.1063/1.123082Epitaxial growth and properties of III-V magnetic semiconductor (GaMn)As and its heterostructures

Ultrafast all-optical switching at an optical communication wavelength has been investigated by utilizing an intersubband transition (ISBT) of II–VI-based multiple quantum wells (MQWs) fabricated in high-mesa waveguide devices. The waveguide structure consists of a CdS∕ZnSe∕BeTe MQW core layer and two top and bottom ZnMgBeSe quaternary cladding layers grown by molecular beam epitaxy on a (001) GaAs substrate. A marked increase in waveguide transmittance was observed only for transverse-magnetic-polarized subpicosecond pulse with increasing incident pulse energy at λ=1.57μm, indicative of the ISBT absorption saturation. The pulse energy necessary for a 10dB transmittance increase is as low as 13.3pJ for a waveguide device with 2.7μm mesa, and the saturation pulse energy can be even further reduced by employing a narrower mesa structure. Ultrafast gate switching within a time window of 0.56ps was also demonstrated with pump pulse at λ=1.57μm and probe pulse at λ=1.63μm in this waveguide device.