In this work, the thermoelectric properties of p-type layered chalcostibite CuSb 1−x Pb x Se 2 (x = 0−0.10) compounds prepared by vacuum melting reaction and uniaxial hot press, have been studied in the temperature range of 323−623 K. Further, aliovalent Pb 2+ doping at Sb 3+ site in CuSbSe 2 notably increases the hole concentration due to its acceptor nature and thereby enhances the electrical conductivity, σ. Importantly, a huge reduction in total thermal conductivity, κ total has been noticed, from ∼1.7 W/mK (pristine CuSbSe 2 ) to ∼0.72 W/mK at 323 K for CuSb 0.90 Pb 0.10 Se 2 owing to increased phonon scattering from the introduced point defects and mass-difference between Pb and Sb. As a result, the thermoelectric figure of merit, zT, has been enhanced to ∼0.27 at 623 K for the composition of CuSb 0.90 Pb 0.10 Se 2 , which is 3-fold higher than that of the undoped CuSbSe 2 . Further, the hardness value achieved was ∼125.54 Hv, which is significantly higher than the most of the state-of-the-art materials, indicating it to be an efficient thermoelectric material for intermediate temperature.
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