GaAs is usually contaminated by carbon and & IC due to its growth conditions. Acting shallon mepto-these substitutional impurities substantially determine the electrical and optical behaviour of this materid. We measured the far infrared absorption spectra due to optical transitions of holes bound to these acceptors in LEC grow GaAs at T E 1.2 K, B 6 7 T and magnetic field directions Bll(lOO), ( 110) and ( 111). We present theg-values of the 1S&a gmundstate and, for the first time, the 2P3/2rs and the 2P5/Js excited states. We use a graphical melhod to analyse the splitting of the levels mentimed earlier using only symmetry considerations.

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