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Crystals of LiZnP, LiCdP, and LiZnAs are prepared by direct fusion of constituent elements. All three materials are found to be p-type semiconductors. Absorption edge and photoconductivity spectra are measured. Band gaps are estimated to be 1.25 eV for LiZnAs, 1.3 eV for LiCdP, and 2.1 eV for LiZnP.

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Raman spectra of CulnSwSe(l-,, mixed crystals are reponed. The dependence of the mode frequencies on lhe composition is studied. Two-mode behaviour is observed for the higherfrequency phonons. One-mode behaviour is found for the low-frequency modes corresponding to the zone-edge acoustic phonons of zincblende.Solid solutions of CuInSbSez(l-z) type are considered as an alternative for CuInSe;? as an absorber in thin-film solar cells [l]. They crystallize in the chalcopyrite structure over the whole composition range. The band gap varies from 1.04 eV for CuInSe;? to 1.53 eV for CuInSz. To our knowledge no data on the lattice dynamics of this system have been

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