Type II arsenide/antimonide compound semiconductor with highly staggered GaAs 0.35 Sb 0.65 /In 0.7 Ga 0.3 As hetero-junction is used to demonstrate hetero tunnel FET (TFET) with record high drive currents (I ON ) of 190µA/µm and 100µA/µm at V DS =0.75V and 0.3V, respectively (L G =150nm). In x Ga 1-x As (x=0.53, 0.7) homo-junction TFETs and GaAs 0.5 Sb 0.5 /In 0.53 Ga 0.47 As hetero TFET with moderate stagger are also fabricated with the same process flow for benchmarking. Measured and simulated TFET performance is benchmarked with 40nm strained Si MOSFETs for 300mV logic applications. IntroductionInter-band tunnel FETs (TFETs) are promising devices for realizing sub-kT/q steep switching slope (SS). Compared to MOSFET, however, the TFET drive current (I ON ) is considerably low due to the large source side tunneling barrier (E beff ). Bandgap (E g ) engineered III-V hetero-junctions could meet the I ON requirement while achieving sub-kT/q SS and low off-state leakage current (I OFF ) (1). In this work, we experimentally demonstrate GaAs 0.35 Sb 0.65 /In 0.7 Ga 0.3 As highly staggered hetero-junction TFET and show 400% I ON enhancement over corresponding In 0.7 Ga 0.3 As homo-junction TFET. Using calibrated numerical simulations, we further show that MOSFET-like high I ON can be achieved using highly staggered hetero-junction, ultra thin body and low EOT for Vcc=300mV logic applications.

Staggered tunnel junction (GaAs 0.35 Sb 0.65 /In 0.7 Ga 0.3 As) is used to demonstrate heterojunction tunnel FET (TFET) with the highest drive current, I on , of 135µA/µm and highest I on /I off ratio of 2.7u10 4 (V ds =0.5V, V on -V off =1.5V). Effective oxide thickness (EOT) scaling (using Al 2 O 3 /HfO 2 bilayer gate stack) coupled with pulsed I-V measurements (suppressing D it response) enable demonstration of steeper switching TFET.

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