Implantation of MeV erbium ions into micron-thick silica and phosphosilicate glass films and 1200-A-thick S&N4 films is studied with the, aim of incorporating the rare-earth dopant on an optically active site in the network: Implantation energies and fluences range from 500 keV to 3.5 MeV and 3.8~ 1015 to 9.0~ lOi ions/cm2. After proper thermal annealing, all implanted fiims show an intense and sharply peaked photoluminescence spectrum centered around /1 = 1.54 pm. The fluorescence lifetime'ranges from 6 to 15 ms for the silicabased glasses, depending on annealing treatment and Er concentration. Silicon nitride films show lower lifetimes, in the range < 0.2-7 ms. Annealing characteristics of all materials are interpreted in terms of annealing of ion-induced network defects. These defects are identified using photoluminescence spectroscopy at 4.2 K. Concentration quenching, diffusion and precipitation behavior of Er is also studied.

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A Si3N4 core waveguide, matched to a laser mode, is adiabatically tapered into a SiO2:P core waveguide, matched to a fiber mode. When used to couple the light from a semiconductor laser into an optical fiber, a loss of 3.1 dB is obtained, compared to a loss of 4.5 dB obtained with a lensed fiber.

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