We describe a microreflectance difference (microRD) spectrometer based on a charge coupled device (CCD), in contrast to most common RD spectrometers that are based on a photomultiplier or a photodiode as a light detector. The advantage of our instrument over others is the possibility to isolate the RD spectrum of specific areas of the sample; thus topographic maps of the surface can be obtained. In our setup we have a maximum spatial resolution of approximately 2.50 microm x 2.50 microm and a spectral range from 1.2 to 5.5 eV. To illustrate the performance of the spectrometer, we have measured strains in mechanically polished GaAs (001) single crystals.

We present a spectroscopic ellipsometry study of Mo-doped VO2 thin films deposited on silicon substrates for the mid-infrared range. The dielectric functions and conductivity were extracted from analytical fittings of Ψ and Δ ellipsometric angles showing a strong dependence on the dopant concentration and the temperature. Insulator-to-metal transition (IMT) temperature is found to decrease linearly with increasing doping level. A correction to the classical Drude model (termed Drude-Smith) has been shown to provide excellent fits to the experimental measurements of dielectric constants of doped/undoped films and the extracted parameters offer an adequate explanation for the IMT based on the carriers backscattering across the percolation transition. The smoother IMT observed in the hysteresis loops as the doping concentration is increased, is explained by charge density accumulation, which we quantify through the integral of optical conductivity. In addition, we describe the physics behind a localized Fano resonance that has not yet been demonstrated and explained in the literature for doped/undoped VO2 films.

We report the reflectivity of one-dimensional finite and semi-infinite photonic crystals, computed through the coupling to Bloch modes (BM) and through a transfer matrix method (TMM), and their comparison to the experimental spectral line shapes of porous silicon (PS) multilayer structures. Both methods reproduce a forbidden photonic bandgap (PBG), but slowly-converging oscillations are observed in the TMM as the number of layers increases to infinity, while a smooth converged behavior is presented with BM. The experimental reflectivity spectra is in good agreement with the TMM results for multilayer structures with a small number of periods. However, for structures with large amount of periods, the measured spectral line shapes exhibit better agreement with the smooth behavior predicted by BM.

Exciton-polaritons in semiconductor microcavities are ideal for the study of the exciton-light interaction and its dependence on light polarization. In this work, we report on the optical response and the dependence on polarization of a polariton microcavity using microreflectance anisotropy spectroscopy (μ-RAS) with a spatial resolution of 10.0 × 10.0 μm 2. We have found that, in contrast to optical reflection, the μ-RAS spectra are quite inhomogeneous along the microcavity surface. We demonstrate the existence of microscopic local domains with differences in optical anisotropy of up to 20% within 100 μm. These variations are independent of the detuning between the optical and excitonic resonances, which in our sample is close to 0 meV. The μ-RAS line shape can be understood by using a model based on the anisotropic strain fields induced at the interfaces of the microcavity. The model agrees quite well with the experimental results and allows us to quantify the split of the energy levels of the exciton-polariton branches induced by the local break of symmetry at the microcavity interfaces.

Macroreflectance and microreflectance difference spectroscopies have been used to measure the strain induced optical anisotropies of semiconductor structures comprised of strained Si(110) thin films deposited on top of step-graded SiGe virtual substrates. The stress relaxation mechanism mainly occurs by the introduction of microtwin formation, whose fluctuation depends strongly on growth conditions. Correlations of such optical diagnostics with x-ray diffraction measurements and atomic force microscopy images, allow for the in situ study of the strain within both the top Si layer and the SiGe underneath with an spatial resolution of at least 5 μm.