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This paper reports on the intense broadband photoluminescence (PL) emission from the ZnO/porous silicon nanocomposite films. The porous silicon (PS) samples were formed by electrochemical anodization on p-type (1 0 0) silicon wafer and ZnO thin films are deposited by the sol–gel spin coating technique in the pores of PS. The average pore size of PS samples is 30 nm. The glancing angle x-ray diffraction pattern of as-deposited and annealed films shows that the quality of (0 0 2) oriented ZnO nanocrystallites improves with annealing at moderate temperature and are polycrystalline in nature. The average crystallize size was found to be 40 nm. The surface topography of the ZnO/PS nanocomposite films has been studied using atomic force microscopy. The mechanism and interpretation of broadband PL from 400 to 900 nm of the nanocomposites are discussed using oxygen-bonding and native defects models for PS and ZnO, respectively. These nanocomposite films could be used as a source of broadband luminescence across most of the visible spectrum.

Origin of the Raman mode in nanocrystalline zinc oxide in the vicinity of A(1) (LO) phonon mode induced by energetic heavy ions is reported. The evolution of this mode in the irradiated films is ascribed to the effect of disorder and the high density of lattice defects induced by irradiation. The presence of such defects is confirmed by the reduction in the intensity of E(2) (high) mode and band bending of the near band edge absorption. A softening of the evolved Raman mode with increasing in ion fluence is also observed. This softening cannot be attributed to spatial confinement of phonons, as the sizes of the crystallites are large. Therefore, it is explained in terms of the combined effects of phonon localization by lattice defects and the structural strain in the lattice induced by electronic energy loss transferred by energetic heavy ions

White light emission across the extended visible region of the electromagnetic spectrum from the ZnO–porous silicon (PS) nanocomposite is reported. Nanocrystallites of ZnO were grown inside the spongy structures of PS by the chemical route of sol–gel spin coating. The property of the material arises from versatile interactions among the host structures of PS and ZnO. The origin of the observed extended white light emission from 1.4 to 3.3 eV is discussed by developing a flat band energy diagram.

Softening and stiffening of phonons in rutile titanium dioxide films are investigated by in situ micro-Raman studies during energetic ion irradiation. The in situ study minimized other possible mechanisms of phonon dynamics. Initial softening and broadening of Raman shift are attributed to the phonon confinement by structural defects and loss of stoichiometry. The stiffening of A 1g mode is ascribed to large distortion of TiO 6 octahedra under the influence of lattice strain in the (110) plane, which gives rise to lengthening of equatorial Ti-O bond and shortening of apical Ti-O bond. The shortening of apical Ti-O bond induces stiffening of A 1g mode in the framework of the bond-order-length-strength correlation mechanism. V C 2014 AIP Publishing LLC.