This paper addresses the design, implementation, and characterization of a novel highdensity Triple Gate Transistor in a 40 nm embedded Non-Volatile Memory technology. Deep trenches are used to integrate two vertical transistors connected in parallel with the main planar transistor. Thanks to the built-in trenches, the proposed manufacturing process increases the transistor width without impacting its footprint. The voltage/current characteristics of a planar MOS structure are compared with the features of the new Triple Gate Transistor. The new architecture provides an improved driving capability, with an on-state drain current twice as high as its equivalent standard MOS, combined with a lower threshold voltage, suitable for low-voltage applications. Finally, the gate oxide and junction reliability are validated over the operating voltage range.

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