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The thermal oxidation of Si using H20-O2 and H20-N2 ambients has been studied with an automated ellipsometer which can observe the oxidation in situ. The oxidations were carried out in the temperature range of 780 ~ * Electrochemical Society Active Member.

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It is shown that the often cited inverse-logarithmic oxidation law, X−1 ∝ −logt, where X is the oxide thickness and t the observation time, is not an asymptotic solution of the rate equation derived by Mott and Cabrera in their theory of low temperature oxidation. Thus whether or not the inverse-logarithmic law is experimentally verified has no bearing on the validity of this theory. A correct solution is presented, and it is shown that for thin oxide films a plot of X−1 vs log(t/X2) should yield straight lines. Vermilyea's data on Ta is reexamined according to this analysis and yields reasonable results for the activation energy of defect solution (1.59 eV) and for the potential across the oxide (1.79 V).