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PhellO}ll<:IW ulTccting dose control of plasma doping processes for t:lbrication of ultra shallow junctions were in\"estigated. One was doping from neutral gas species dUring plasma doping, which was revealed by the experiment of plasma pre-treatment followed by gas phase doping. of B. It was fo und thut Ar or He plasma Hcli,'ated Si surt:1 ce so that introduction of B from neutral I3,H6 gas phase was enhanced. The other one was Liose nll"ia tion by chemical treatments using SPM or dilLlted I-IF. It was found that SPM treatmcnt reduced loss of 13 dose in the following annealing process while HF treatment increased it.

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P/asma doping is promising candidate to realize u/tra sha//ow junctions for future smal/ sca/e CMOS devices.Wet cleaning processes were investigated on sha//ow boron doped /ayers formed by p/asma doping method in this work The three kinds o f cleaning processes such as dihted HE APM and SPM were used for as-doped samp/es, and compared /oss o f boron aper therma/ anneahng between these deaning pmcesses. It was found that the diluted HF cleaning exhibited /aKe decrease of boron dose whi/e the SPM deaning exhibitedsuppression o f /om of boron dose. I? was specu/aied thaf inc/usion of bomn info chemical oxide /ayer. formed by the SPM freatment contributed to ihe suppression of loss of boron in thefoh wing annea/ingpmces.s