The structure for β-Ga2O3/Graphene and β-Ga2O3/BP heterostructure MOSFET has been proposed and investigated for the first time in this work. The RF performance of proposed structure was analyzed and compared with the experimental results of the conventional β-Ga2O3 MOSFET. The key RF figure of merits (FOMs) such as transconductance (gm), cutoff frequency (fT), output power (POUT), power Gain (GP) and power added efficiency (PAE) is obtained for the above proposed structure. The large signal RF performance analysis of earlier proposed structure has also been carried out in this work by using CW Class-A power measurement at the frequency of 0.8 GHz using passive load and source tuning. This work elucidate the use of β-Ga2O3/Graphene and β-Ga2O3/BP heterostructure MOSFETs, for efficient monolithic and heterogeneous integration of RF circuits.

The large bandgap (∼4.8 eV), high critical field strength (∼8 MV cm−1) and high saturation velocity (∼2e7 cm s−1) are the key enabling material parameters of gallium oxide (GO) which allows it for designing high power radio frequency (RF) MOSFET. In MOS device-based applications, these material parameters combined with large area native substrates and ion-implantation technology results in exceptionally low ON-state power losses, high-speed power, RF switching, and more stable high-temperature operation. This paper comprehensively focuses on reviewing the latest progress of ultra-wide bandgap GO MOSFET for RF application. The performance of GO MOS devices is fully discussed and compared. Finally, potential solutions to the challenges of GO-based MOSFET for RF applications are also discussed and explored.

In this work, the RF performance of proposed p-type NiO pocket based β-Ga2O3/graphene heterostructure MOSFET has been investigated. The figure of merits (FOMs) for its performance investigation includes transconductance (gm), output conductance (gd), intrinsic capacitances (gate to drain capacitance Cgd and gate to source capacitance Cgs) and cut-off frequency (fT). The large signal CW RF performance is also investigated which includes output power (POUT), power-added efficiency (PAE) and power gain (Gp) as a key FOMs. The key idea behind this work is to demonstrate a device with improved RF performance and low leakages. The RF characteristics of the proposed device have been studied to show its utility in the wireless applications. The introduction of ultra-thin graphene layer beneath the channel region results in 0.85 times lower Cgs, 1.04 times improvement in fT and 1.5 dB superior GP in comparison to the p-type NiO pocket based β-Ga2O3 (NiO-GO) MOSFET. The proposed structure shows superior RF performance with low leakages.

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