Ab!;tract In-quadrature freqiency-resolved photocurrent (PRPC) measurements were perforined on amorphous SeTe films between 20 K and 290 K. and as a function of excitation intensity. These measuremenrs yield lifetime distributions directly. The results show that the reclimbination kkes place between distant pain and that there is a continuous distribution of stat!s within the mobility gap.
In-quadrature frequency-resolved photocurrent (FRPC) measurements were performed on amorphous (a-) As 2 Te 3 thin films between 20 K and 290 K, and as a function of excitation intensity. These measurements yield lifetime distributions directly. We have obtained a recombination lifetime of about 8 µs for a-As 2 Te 3 . This lifetime was found to be independent of excitation intensity and temperature. It is explained in terms of the capture of nonequilibrium carriers. We also present the temperature and intensity dependences of the FRPC response of a-As 2 Te 3 at a constant modulation frequency. They give information about recombination kinetics.
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