International audienceThis paper presents the electrical model of a PMOS transistor in 90nm technology under 1064nm Photoelectric Laser Stimulation. The model was built and tuned from measurements made on test structures. It permits to simulate theeffectofacontinuous wave laser on a PMOS transistor by taking into account the laser's parameters (i.e. spot size and location, orpower)andthePMOS'geometryandbias. It offers a significant gain of time by comparison with experiments and makes possible to build 3D photocurrent cartographies generated by the laser on the PMOS

This study is driven by the need analysis methodologies based on laser/silicon the functional response of an integrated cir stimulation. It is therefore mandatory to under of elementary devices to laser illumination, in predict the behavior of more complex cir characterizes and analyses photoelectric effect 1064 nm wavelength laser on a 90 nm transistor. Comparisons between photocurren channel transistor, or in function of its sta presented. Experimental measurements are c Elements Modeling Technology Computer Aid analyses, which gives a physical insight of carr transport in the devices.

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