No abstract

We report here results of high-speed single event effect (SEE) testing of SiGe-based ASICs using Sandia National Laboratories ion microbeam probe. Test results are presented for shift registers operating at clock speeds from 0.1 to 6.4 GHz, and provide a way to correlate relative SEU vulnerability to circuit design. The results show that in similar circuits such as "track" and "hold" pairs in the latches, and the emitter followers in the buffers, circuit function can cause significant differences in sensitivity.Index Terms-Heavy ion, microbeam, silicon germanium, single event upset.