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A polysilicon transistor based active matrix organic light emitting diode (AMOLED) pixel with high pixel to pixel luminance uniformity is reported. The new pixel powers the OLEDS with small constant currents to ensure consistent brightness and extended life. Excellent pixel to pixel current drive uniformity is obtained despite the threshold voltage variation inherent in polysilicon transistors. considerations in the design for high information content displays are discussed.

The promise of organic light emitting diode (OLED) displays is becoming a reality as demonstrated by the passive matrix OLED displays already in the market. The passive matrix architecture cannot support the high resolutions expected by the consumer due to the currents required to perform the high degree of multiplexing. The gap between expectation and performance is driving continued development of active matrix OLED (AMOLED) displays that do support the required high information content formats. Pixel-to-pixel uniformity across a large area is a key consideration for AMOLED displays fabricated using thin film transistor technologies.Transistor technologies including a-Si:H, poly-Si, crystalline Si, and organics will be reviewed with respect to application to AMOLED displays.

The design of an active matrix organic light emitting diode (AMOLED) display using a polysilicon thin film transistor pixel is described. Characteristics of the OLED response in the low current regime are described and their impact on the design of integrated driver circuitry is discussed. Integrated data and select scanners which generate the signals necessary for data capture and pixel calibration are presented.

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