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The presence of Ni in vapour-phase epitaxy (VPE) GaP has been detected through the strong photoluminescence band it induces in the infrared, centred near 2 mu m. The band remains intense up to

High-power heterostructure lasers have been produced by atmospheric MOCVD. Investigation of both electrical and optical properties of doped and undoped AlGaAs has been performed. SIMS analysis reveals the presence of silicon at levels up to 1 x lo" cm-3. 4 K PL measurements indicate the presence of a competing recombination centre at 1.26 eV (1=0.98 pm) which has been attributed to a H20induced defect. Discrete devices operating under pulsed currents of 40 A, r = 8 0 ns, produce output powers in excess of 20 W. T,,-values of 155 K have been achieved. Stable temperature performance has been achieved over the temperature range (25-85 O C ) with output powers showing, at worse, a 20% reduction.

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