A three-color, solid-state, volumetric display based on two-step, two-frequency upconversion in rare earth-doped heavy metal fluoride glass is described. The device uses infrared laser beams that intersect inside a transparent volume of active optical material to address red, green, and blue voxels by sequential two-step resonant absorption. Three-dimensional wire-frame images, surface areas, and solids are drawn by scanning the point of intersection of the lasers around inside of the material. The prototype device is driven with laser diodes, uses conventional focusing optics and mechanical scanners, and is bright enough to be seen in ambient room lighting conditions. QuickTime movie of the three-dimensional display.

Designing systems with large magnetic anisotropy is critical to realize nanoscopic magnets. Thus far, the magnetic anisotropy energy per atom in single-molecule magnets and ferromagnetic films remains typically one to two orders of magnitude below the theoretical limit imposed by the atomic spin-orbit interaction. We realized the maximum magnetic anisotropy for a 3d transition metal atom by coordinating a single Co atom to the O site of an MgO(100) surface. Scanning tunneling spectroscopy reveals a record-high zero-field splitting of 58 millielectron volts as well as slow relaxation of the Co atom's magnetization. This striking behavior originates from the dominating axial ligand field at the O adsorption site, which leads to out-of-plane uniaxial anisotropy while preserving the gas-phase orbital moment of Co, as observed with x-ray magnetic circular dichroism.

No abstract

The spin polarization of current injected into GaAs from a CoFe/MgO(100) tunnel injector is inferred from the electroluminescence polarization from GaAs/AlGaAs quantum well detectors. The polarization reaches 57% at 100 K and 47% at 290 K in a 5 T perpendicular magnetic field. Taking into account the field dependence of the luminescence polarization, the spin injection efficiency is at least 52% at 100 K, and 32% at 290 K. We find a nonmonotonic temperature dependence of the polarization which can be attributed to spin relaxation in the quantum well detectors.

Detailed site-selective spectroscopy has been performed as a function of temperature on the 7 F 0 ↔ 5 D 0 transition of Eu 3ϩ :Y 2 SiO 5 for Eu 3ϩ concentrations of 0.02%, 0.1%, 0.5%, and 1%. Time-domain optical dephasing, spectral hole lifetimes, anisotropic absorption coefficients, inhomogeneous linewidths, and fluorescence lifetimes for Eu 3ϩ ions at both crystallographic sites were measured. The temperature dependence of the optical dephasing, transition energy, and linewidth of the 7 F 0 → 5 D 0 absorption was measured and interpreted in terms of Raman scattering of phonons. Photon echo measurements of optical dephasing gave T 2 values as long as 2.6 ms, approaching the limit set by the fluorescence decay time. Spectral hole lifetimes were measured for temperatures from 2 K to 18 K, with observed lifetimes varying from 1 s at 18 K to an estimated value of greater than 20 days at 2 K. Anisotropic absorption coefficients were measured, and an increase in Eu 3ϩ concentration from 0.02% to 7% produced an increase in the inhomogeneous linewidth ⌫ inh from 0.5 GHz to ϳ150 GHz, indicating that Eu 3ϩ doping induces significant strain in the crystal. New determinations of many energy levels of 7 F J multiplets have been made for Jϭ0 to 6.