Silicon solar cells produced by a usual technology in p-type, crystalline silicon wafer were investigated. The manufactured solar cells were of total thickness 450 mm, the junction depth was of 0.5 mm – 0.7 mm. Porous silicon technologies were adapted to enhance cell efficiency. The production of porous silicon layer was carried out in HF: ethanol = 1 : 2 volume ratio electrolytes, illuminating by 50 W halogen lamps at the time of processing. The etching current was computer-controlled in the limits of (6 ÷ 14) mA/cm², etching time was set in the interval of (10 ÷ 20) s. The characteristics and performance of the solar cells samples was carried out illuminating by Xenon 5000 K lamp light. Current-voltage characteristic studies have shown that porous silicon structures produced affect the extent of dark and lighting parameters of the samples. Exactly it affects current-voltage characteristic and serial resistance of the cells. It has shown, the formation of porous silicon structure causes an increase in the electric power created of solar cell. Conversion efficiency increases also respectively to the initial efficiency of cell. Increase of solar cell maximum power in 15 or even more percent is found. The highest increase in power have been observed in the spectral range of Dl @ (450 ÷ 850) nm, where ~ 60 % of the A1.5 spectra solar energy is located. It has been demonstrated that porous silicon technology is effective tool to improve the silicon solar cells performance.

DOI: http://dx.doi.org/10.5755/j01.ms.18.3.2428

Attempts to use microporous silicon structures in detection of microwave radiation were investigated. Point-contact-like samples containing microporous silicon layers were manufactured using traditional technique of electrochemical etching of p-type crystalline silicon. The response of the structures to microwave radiation of 10 GHz frequency was studied. It is shown that the microporous silicon containing samples exhibited sensitivity by several orders higher than that of similar detectors having no porous layers. The results were analysed within the model of hot carrier effects.

This work presents porous silicon technology, adapted to improve the characteristics of monocrystalline silicon solar cell. This is achieved by taking advantage of properties provided by porous silicon technology in production of diverse structures in the material. We produce a porous silicon derivative, which is mostly hidden in the emitter of solar cell. Research of the initial and modied solar cells was made by measuring currentvoltage characteristics under illumination of a 5000 K xenon lamp. Spectrally resolved studies of currentvoltage characteristics were carried out using radiation of halogen lamps and diraction grating monochromator. Studies revealed that the manufacturing of buried porous silicon structure improves solar cell performance by increasing the ll factor of the modied solar cell currentvoltage characteristics, maximum output power and eciency, when compared to unmodied ones. Spectral studies revealed that the above-mentioned improvement diers for various sections of light spectrum. Largest relative enhancement of solar cell current was observed at the wavelengths of ∆λ = 450550 nm. We consider the cumulative result of several eects resulting in solar cell eciency enhancement. Most of them were the inuence of porosity on eective optical path length and better anti-reecting properties of multiple porous structures.

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The paper examines the parameters of crystalline silicon solar cells such as fill factor, maximal output power and series resistance forming a porous silicon layer. The obtained results show that introducing the layer into the structure of a solar cell results in a 19 percent enhancement of maximal output power and conversion efficiency. Santrauka Šiame darbe tiriamas akytojo silicio darinių poveikis saulės elementų elektrinėms charakteristikoms: nuosekliajai varžai, voltamperinių charakteristikų formai. Parodyta, kad pagaminus silicio saulės elemente akytojo silicio sluoksnį, galima veikti (valdyti) saulės elementų voltamperines charakteristikas ir elemento nuosekliąją elektrinę varžą. Nustatyta, kad tiriamajame bandinyje suformavus akytojo silicio sluoksnį, apkrovos voltamperinės charakteristikos užpildos rodiklis padidėjo 1,15 karto, o maksimali elemento kuriama ir apkrovos metu atiduodama elektros energijos galia – 1,19 karto. Tiek pat 1,19 karto padidėjo saulės elemento šviesos konversijos į elektros energiją efektyvumas.