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We have reported a comprehensive study on temperature and disorder dependence of inelastic electron dephasing scattering rate in disordered V82Al18-xFex alloys. The dephasing scattering time has been measured by analysis of low field magnetoresistance using the weak localization theory. In absence of magnetic field the variation of low temperature resistivity rise follows the relation Δρ(T)∝−ρ05/2T, which is well described by three-dimensional electron-electron interactions. The temperature-independent dephasing rate strongly depends on disorder and follows the relation τ0−1∝le, where le is the electron elastic mean free path. The inelastic electron-phonon scattering rate obeying the anomalous relation τe−ph−1∝T2le. This anomalous behavior of τe−ph−1 cannot be explained in terms of current theories for electron-phonon scattering in impure dirty conductors.

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