No abstract

No abstract

No abstract

No abstract

Different hardness-assurance tests are often required for advanced bipolar devices than for CMOS devices. In this work, the dose-rate dependence of bipolar current-gain degradation is mapped over a wide range of dose rates for the first time, and it is very different from analogous MOSFET curves. Annealing experiments following irradiation show negligible change in base current at room temperature, but significant recovery a t temperatures of 100°C and above. In contrast to what is observed in MOSFET's, irradiation and annealing tests cannot be used to predict the low-dose-rate response of bipolar devices. A comparison of x-ray-induced and 6oCo gamma-rayinduced gain degradation is reported for the first time for bipolar transistors. The role of the emitter bias during irradiation is also examined. Implications for hardening and hardness assurance are discussed.