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GaAs and InP based solar cells were fabricated using epitaxial lift-off (ELO) across 4-inch based substrates. 1 cm 2 GaAs solar cells have been fabricated with a yield >80% across full 4" ELO wafers. The efficiency of a dual junction GaAs solar cell (ELO) was 22%. Single junction InP ELO solar cell was demonstrated on a 4-inch InP substrate with an efficiency of 11%. Transmission electron microscopy studies of ELO solar cells indicated no evidence of threading dislocations, voids or delaminating at the semiconductor-metal interface. The ELO technology was applied to both GaAs and InP based materials over the entire substrate area with excellent success. ELO can be used to realize ultra light high efficiency solar cells for both space and terrestrial applications. The ELO process also provides the ability to reuse the substrate numerous times. This provides tremendous benefits in the utilization of raw materials to realize a greener and cleaner environment.