It has proven challenging for VLSI designers to lower leakage power at the nanoscale level. This is because high- end gadgets, battery-operated portable pads, and other communication tools are in high demand. Memories are made up of static RAM and dynamic RAM. SRAM has had a significant impact on the worldwide VLSI market sinceit is preferred over DRAM because to its rapid read and write access times. Using a 6T static random access memory cell, this study's novel approach to lowering leakage current at various technologies has been put forth. To reduce the 6T SRAM cell leaking power, three source biasing techniques are used. At 45 nanometer and 90 nm technology nodes, the three techniques are NMOS diode clamping, PMOS diode clamping, and NMOS-PMOS diode clamping. The implementation of a 6T SRAM cell using the Multiple Threshold CMOS (MTCMOS) technique at 45nm technology is also emphasised in this article. Using the cadence virtuoso tool, the simulation is completed and different power dissipations are examined for 45 nm and 90 nm technologies, respectively, at supply voltages of 0.45 V and 0.9 V. Comparing PMOS clamping to the other two suggested techniques, an average power reduction of 82.19% was observed.