We report on microwave optomechanics measurements performed on a nuclear adiabatic demagnetization cryostat, whose temperature is determined by accurate thermometry from below 500 µK to about 1 Kelvin. We describe a method for accessing the on-chip temperature, building on the blue-detuned parametric instability and a standard microwave setup. The capabilities and sensitivity of both the experimental arrangement and the developed technique are demonstrated with a very weakly coupled silicon-nitride doubly-clamped beam mode of about 4 MHz and a niobium on-chip cavity resonating around 6 GHz. We report on an unstable intrinsic driving force in the coupled microwave-mechanical system acting on the mechanics that appears below typically 100 mK. The origin of this phenomenon remains unknown, and deserves theoretical input. It prevents us from performing reliable experiments below typically 10-30 mK; however no evidence of thermal decoupling is observed, and we propose that the same features should be present in all devices sharing the microwave technology, at different levels of strengths. We further demonstrate empirically how most of the unstable feature can be annihilated, and speculate how the mechanism could be linked to atomic-scale two level systems. The described microwave/microkelvin facility is part of the EMP platform, and shall be used for further experiments within and below the millikelvin range.

Advances in nanomechanics within recent years have demonstrated an always expanding range of devices, from top-down structures to appealing bottom-up MoS and graphene membranes, used for both sensing and component-oriented applications. One of the main concerns in all of these devices is frequency noise, which ultimately limits their applicability. This issue has attracted a lot of attention recently, and the origin of this noise remains elusive to date. In this article we present a very simple technique to measure frequency noise in nonlinear mechanical devices, based on the presence of bistability. It is illustrated on silicon-nitride high-stress doubly clamped beams, in a cryogenic environment. We report on the same T/ f dependence of the frequency noise power spectra as reported in the literature. But we also find unexpected damping fluctuations, amplified in the vicinity of the bifurcation points; this effect is clearly distinct from already reported nonlinear dephasing and poses a fundamental limit on the measurement of bifurcation frequencies. The technique is further applied to the measurement of frequency noise as a function of mode number, within the same device. The relative frequency noise for the fundamental flexure δ f/ f lies in the range 0.5-0.01 ppm (consistent with the literature for cryogenic MHz devices) and decreases with mode number in the range studied. The technique can be applied to any type of nanomechanical structure, enabling progress toward the understanding of intrinsic sources of noise in these devices.