The material properties of several commercial spin-on glasses were investigated. Infrared spectrophotometry was used to study the annealing effects on thecontents of hydroxyl and organic groups. Their concentrations are found to be sensitive to the annealing temperatures and annealing ambients. Both the room-temperature stress and the in situ stress during annealing were monitored. The measured stress levels of films on Si wafers are low (less than 108 Pa in tensile) compared to other deposited silicon dioxide films. Dielectric properties, including dielectric constants and dissipation factors, were also examined as a function of annealing conditions. A strong correlation between the dielectric properties and the OH content in the film was established. Of the two films studied most extensively, one showed significantly better dielectric properties following low-temperature (<600~ curing. Both are good dielectric films for VLSI interlayer dielectric applications if high-temperature annealings are allowed.

ChemInform Abstract The effects of annealing temp. and ambient on the characteristics of two different types of spin-on glasses (SOG) with very good coating properties have been investigated. It is shown that the concentrations of hydroxyl and organic groups in the SOG films are very sensitive to the annealing temp. and ambients. The stress levels of both films are low tensile after 450 and 650 rc C annealing. The stress is relieved at 920 rc C and becomes compressive when cooled to room temperature. The measured dielectric properties re also found to be sensitive to annealing conditions and a strong correlation between the dielectric properties and the OH content in the film is observed. Dielectric constant and dissipation factor increase with OH concentration. Both materials are good dielectric films for LSI interlayer dielectric applications if high-temp. annealings are allowed.