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In order to reproduce the transient IR-FIR reflectivity and transmission due to an intense photo-plasma generated by a fast laser pulse at a frequency above the band gap, we have used a dynamical model of plasma evolution. In this way we have derived both the `quadratic' and `cubed' coefficients of the Auger recombination in indium antimonide, by analysing the transient reflectivity at 10.6 µ and 119 µ induced by a fast Nd pulse. In particular we have derived a cubic coefficient of about 7±3×10-26 cm6 s-1, a result larger than those derived in previous experimental works but quite in agreement with the theory.

By using a dynamical model giving both the IR reflectivity and transmittivity of a semiconductor after an intense photo-plasma production, it is possible to derive several electrical parameters, as Auger recombination, radiative recombination and impurity recombination. The model has been tested on previous experimental works and used to analyse the 10.6 µm dynamical transmission reflection induced by a 1.06 ns excitation in Ge optical windows.

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