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Uniform submicron epitaxial films have been prepared by an optimized version of the ASCl3 , Ga, H2 process. Film requirements and properties of films necessary for high performance normalGaAs FET's are discussed. Growth rate dependences of the Ga source and substrate temperature are shown. Growth rate dependence upon the ASCl3 mole fraction and mass transport effects are shown in the range of interest. Effects of the thermal gradient imposed during deposition are related to the film thickness and doping uniformity obtained with a 5°C/cm and 0.5°/cm process. Vapor doping from H2S and Sn‐doped Ga sources is discussed and related to the character of the epitaxial doping profile. Epitaxial films grown by this technique have been produced in the range of 0.2–04µ with variations in film thickness and doping of < ±10%.

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