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T raditionally, the cellular radio frequency (RF) transceiver market was dominated by bipolar complementary metal-oxide-semiconductor (BiC MOS)-based transceivers. While complementary metal-oxide-semiconductor (CMOS) was seen as a contending technology for some time, especially in the academic domain [1], the first products based on CMOS technology entered the cellular market only a few years ago [2]. Within a few years, the once-dominant position of SiGeBiCMOS technology was successfully tackled by CMOS, as depicted in Figure 1.This shift in technology favored a more "digital" centric transceiver partitioning, although the traditional analog architectures (e.g., direct-conversion receiver, direct modulation, or phase-locked loop (PLL)-based transmitters) remained. Sticking to the well-known analog architectures was possible, since 130 nm CMOS devices had enough headroom in terms of supply voltage and analog device performance. The ever-increasing requirements of multiband/multimode/multisystem cellular transceivers can be accommodated by utilizing the higher integration levels of digital blocks made possible with CMOS. Transceivers incorporating nine-band universal mobile telecommunications system (UMTS), including high speed downlink packet access (HSDPA) and high speed uplink packet access (HSUPA), quad-band global system for mobile communications (GSM)/general packet radio service (GPRS)/enhanced data rate for global evolution (EDGE) [4] are conceivable

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