Abstract-We present a theory for passive mode-locking in semiconductor laser structures using a semiconductor laser amplifier and absorber. The mode-locking system is described in terms of the different elements in the semiconductor laser structure. We derive mode-locking conditions and show how other mode-locking parameters, like pulse width and pulse energy, are determined by the mode-locking system. System parameters, like bandwidth, dispersion, and self-phase modutation are shown to play an important role in mode-locking conditions and results. We also discuss the effects of pulse collisions and positions of the mode-locking elements inside the cavity on mode-locking stability and show that these effects can be easily included in the presented model. Finally, we give a number of design rules and recommendations for fabricating passively mode-locked lasers.

Absh-nct-We report on the reflection properties of multimode interference (MMI) devices: we distinguish between reflection back into the input waveguides and internal resonance modes due to the occurrence of simultaneous self-images. Because of self-imaging, reflection CBn be extremely efficient, even in the case of MMI devices with optimized transmission. This conclusion is confirmed by the observed spectral behavior of InP-based ring lasers incorporating MMI 3dB couplers and MMI power splitters. Several techniques are proposed to minimize the influence of these reflections.

Multimode interference (MMI) 3 dB couplers and MMI power combiners have been integrated with compact InP/InGaAsP ring lasers (R=150 μm). Radiative loss from the curves is small, and MMI 3 dB couplers are shown to be more efficient than conventional Y junctions. In addition, we demonstrate improved efficiency by combining counterpropagating beams in a single output by means of a MMI combiner. Single mode spectral behavior, with 35 dB side mode suppression, has been measured and is explained as resulting from coupled cavities.