We have successfully fabricated single-crystalline CdSe nanowires, nanobelts, and sheets by a chemical vapor deposition (CVD) method assisted with laser ablation. The synthesized CdSe nanostructures have hexagonal wurtzite phase as characterized by X-ray diffraction (XRD). CdSe nanobelts can range in length from several tens to a hundred micrometers, in thickness from 40 to 70 nm, and a tapered width which is approximately 3 microm at one end and tapers off to approximately 100 nm at a catalytic gold particle. Both selected area electron diffraction (SAED) and high-resolution transmission electron microscopic (HRTEM) measurements show that the single-crystalline hexagonal belts and sheets grew along the [0.1-1.0] direction with side surface of +/-(0 0 0 1) and top surface of +/-(2 -1 -1 0). While the growth mechanism of nanobelts complies with a combination of vapor-liquid-solid (VLS) and vapor-solid (VS) processes, the formation of sheets is primarily based on the VS mechanism. For comparison, the phonon modes of CdSe nanobelts and bulk powder have been measured by surface-enhanced Raman scattering (SERS) and normal Raman scattering (NRS) spectroscopies with off- and near-resonant excitations. A blue-shift of 2.4 cm(-1) for the longitudinal optical (LO) phonon of CdSe nanobelts, relative to bulk CdSe, is attributed to a lattice contraction in the belt structure, which is confirmed by the XRD measurement. Room-temperature microphotoluminescence (PL) at approximately 1.74 eV from single CdSe nanobelts shows a 3-fold enhancement compared to that from bulk CdSe powder and displays a partial polarization dependence of emission angles.
Zn(x)Cd(1-x)Se alloy nanowires, with composition x = 0, 0.2, 0.5, 0.7, and 1, have been successfully synthesized by a chemical vapor deposition (CVD) method assisted with laser ablation. The as-synthesized alloy nanowires, 60-150 nm in diameter and several tens of micrometers in length, complied with a typical vapor-liquid-solid (VLS) growth mechanism. The Zn(x)Cd(1-x)Se nanowires are single crystalline revealed from high-resolution transmission electron microscopic (HRTEM) images, selected area electron diffraction (SAED) patterns, and X-ray diffraction (XRD) measurement. Compositions of the alloy nanowires can be adjusted by varying the precursor ratios of the laser ablated target and the CVD deposition temperature. Crystalline structures of the Zn(x)Cd(1-x)Se nanowires are hexagonal wurtzite at x = 0, 0.2, and 0.5 with the [0 1 -1 0] growth direction and zinc blende at x = 0.7 and 1 with the [1 -1 1] growth direction. Energy gaps of the Zn(x)Cd(1-x)Se nanowires, determined from micro-photoluminescence (PL) measurements, change nonlinearly as a quadratic function of x with a bowing parameter of approximately 0.45 eV. Strong PL from the Zn(x)Cd(1-x)Se nanowires can be tuned from red (712 nm) to blue (463 nm) with x varying from 0 to 1 and has demonstrated that the alloy nanowires have potential applications in optical and sensory nanotechnology. Micro-Raman shifts of the longitudinal optical (LO) phonon mode observed in the Zn(x)Cd(1-x)Se nanowires show a one-mode behavior pattern following the prediction of a modified random element isodisplacement (MREI) model.
The magnetic properties of Fe ions implanted into a germanium crystal by metal-vapor vacuum arc ion source were investigated using a Quantum Design SQUID magnetometer. The presence of Fe nanoclusters in Ge was verified by magnetization measurements. A Langevin fit was used to obtain the size distribution of the clusters. The results demonstrated that the clusters are magnetic. The magnetic behavior of the clusters was characterized by zero-field-cooled and field-cooled measurements for temperatures 4.2 to 300 K. The implanted layer with magnetic clusters shows negative magnetoresistance with a positive magnetoresistance background due to the Ge substrate for parallel magnetic-field geometry at temperatures 180 to 300 K. The negative magnetoresistance is found to become dominant with decrease of temperature. The negative magnetoresistance is attributed to the existence of magnetic clusters in the implanted layer.
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