du Pont PI-2575-D polyimide films were characterized to determine their suitability for use as an interlevel dielectric with a selective tungsten via fill process. Polyimide films cured at 400 ~ and 440~ were found to breakdown at voltages greater than 1 • I0 ~ V/cm. The pinhole density, when processed in a non-cleanroom environment, is below 1 per cmz. The dielectric constant for 1.6 ~m films is 3.9. Adhesion to thermal oxide is 100% for films in boiling water up to lh. The maximum moisture absorption is 1.7 w/o at 90% relative humidity. Perfect tungsten selectivity was achieved in the absence of nearby tungsten surfaces at 216~ 0.75-7.5 torr total pressure, 15:1 H~:WFa and times to 210 rain. When the polyimide was exposed to adjacent tungsten surfaces, tungsten did deposit on the polyimide, resulting in a moving metal front. The activation energy for the rate of progress of the tungsten film front is 16 kcal/mol. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 134.117.10.200 Downloaded on 2015-06-14 to IP