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The interaction of strong single-cycle THz pulses with the optically induced polarization in germanium quantum wells is studied. With increasing THz field strength, it is observed that the excitonic resonances shift toward higher energy and broaden before weak signatures of a splitting of the exciton line occur. In comparison with high-quality GaAs-based quantum wells, where a much clearer Autler-Townes splitting is observed, the germanium system response is significantly more broadened and shows signatures of a quasi-steadystate behavior due to the intrinsic fast dephasing times dominated by intervalley scattering.

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We have studied the optical properties of Ga(NAsP)-heterostructures, which were systematically grown at different temperatures by means of continuous-wave and time-resolved photoluminescence. We show that both the long ranged and the short ranged disorder scales increase for higher growth temperatures. Furthermore, samples with a higher disorder not only emit less photoluminescence (PL) intensity but also exhibit a longer effective PL decay time.