Results of X‐ray investigations of Hg1–x Cdx Te (x = 0.25) epitaxial layers after single and two‐stage arsenic ion implantation with the energy E = 100 keV are represented. It has been established that for doses D1 = 2 × 1014 ions/cm2 and D2 = (2 × 1014 + 1015) ions/cm2 the Frenkel pair (anion vacancy + interstitial mercury atom) generation is the most probable process. The model of a possible system of structural defects in the near‐surface layers of ion‐implanted structures Hg1–x Cdx Te is proposed. The model allows for the presence of certain dimensions and concentrations of both growth and new defects – the Frenkel pairs, cluster formations and dislocation loops formed under ion radiation. The calculated deformation profiles are complex in shape with characteristic peaks at the depth of maximum nuclear power ion loss. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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New capabilities of the Berg–Barrett topographic method are demonstrated using a skew-asymmetric X-ray diffraction scheme for investigating structural changes near the surface of semiconductor materials. Specifying the X-ray extinction depth, the details of defects and strains are revealed with high resolution. Consequently, analysis of structural distortion of layers near the surface after various types of surface processing becomes more complete.

Показаны прикладные возможности использования модифицированного топографического метода Берга-Баррета в косоасимметричной схеме дифракции рентгеновских лучей на отражение при исследовании морфологии и структурных изменений вблизи поверхности кристаллов. Контролируемое изменение экстинкционной глубины проникновения рентгеновских лучей открывает новые возможности исследования структурных изменений в полупроводниковых материалах после различных внешних воздействий.

Results of X‐ray diffraction studies on structural changes in Si crystals caused by chemical etching for 40 s in HF, HNO3 solution and phosphorus‐ion implantation with the energy E = 100 keV and dose D = 8 × 1014 cm−2 are represented. Two‐ and three‐crystal X‐ray diffractometry methods are used for a quantitative assessment of structural changes occurring in the near‐surface crystal layers. Analysis of experimental rocking curves was made with the use of different approaches developed on the basis of kinematic and dynamic theory of X‐ray scattering in the imperfect crystals. A model of possible system of structural defects in the near‐surface silicon layers modified by chemical etching and ion implantation is proposed. The model accounts for the availability of respective sizes and concentrations of spherical and disc‐shaped cluster formations, dislocation loops.