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The present paper deals with the modeling of low-dimensional transistors in the form of metal-oxide-semiconductor field-effect transistors aiming a compact model that may be used to enrich the characterization tools in use and eventually help to extract more information on the interface Si-SiO2 and the oxide itself. The model is expressed as current versus voltage in the full range and meant to comply with the unified current model.Our model has been compared with the classical model and found to be in a good agreement in the linear and saturation regions. In addition, our model expresses the current in the subthreshold region, which is not described by the classical model.The experimental data obtained on research devices are found to suite our model in all the three regions.

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