In organic thin‐film transistors (TFTs) fabricated in the inverted (bottom‐gate) device structure, the surface roughness of the gate dielectric onto which the organic‐semiconductor layer is deposited is expected to have a significant effect on the TFT characteristics. To quantitatively evaluate this effect, a method to tune the surface roughness of a gate dielectric consisting of a thin layer of aluminum oxide and an alkylphosphonic acid self‐assembled monolayer over a wide range by controlling a single process parameter, namely the substrate temperature during the deposition of the aluminum gate electrodes, is developed. All other process parameters remain constant in the experiments, so that any differences observed in the TFT performance can be confidently ascribed to effects related to the difference in the gate‐dielectric surface roughness. It is found that an increase in surface roughness leads to a significant decrease in the effective charge‐carrier mobility and an increase in the subthreshold swing. It is shown that a larger gate‐dielectric surface roughness leads to a larger density of grain boundaries in the semiconductor layer, which in turn produces a larger density of localized trap states in the semiconductor.

A critical requirement for the application of organic thin-film transistors (TFTs) in mobile or wearable applications is low-voltage operation, which can be achieved by employing ultrathin, high-capacitance gate dielectrics. One option is a hybrid dielectric composed of a thin film of aluminum oxide and a molecular self-assembled monolayer in which the aluminum oxide is formed by exposure of the surface of the aluminum gate electrode to a radio-frequency-generated oxygen plasma. This work investigates how the properties of such dielectrics are affected by the plasma power and the duration of the plasma exposure. For various combinations of plasma power and duration, the thickness and the capacitance of the dielectrics, the leakage-current density through the dielectrics, and the current–voltage characteristics of organic TFTs in which these dielectrics serve as the gate insulator have been evaluated. The influence of the plasma parameters on the surface properties of the dielectrics, the thin-film morphology of the vacuum-deposited organic-semiconductor films, and the resulting TFT characteristics has also been investigated.

The properties of organic thin-film transistors (TFTs) and thus their ability to address specific circuit design requirements depend greatly on the choice of the materials, particularly the organic semiconductor and the gate dielectric. For a particular organic semiconductor, the TFT performance must be reviewed for different combinations of substrates, fabrication conditions, and the choice of the gate dielectric in order to achieve the optimum TFT and circuit characteristics. We have fabricated and characterized organic TFTs based on the small-molecule organic semiconductor 2,7-diphenyl[1]benzothieno[3,2-b][1]benzothiophene in combination with an ultrathin hybrid gate dielectric consisting of aluminum oxide and a self-assembled monolayer. Fluoroalkylphosphonic acids with chain lengths ranging from 6 to 14 carbon atoms have been used to form the self-assembled monolayer in the gate dielectric, and their influence on the TFT characteristics has been studied. By optimizing the fabrication conditions, a turn-on voltage of 0 V with an on/off current ratio above 106 has been achieved, in combination with charge-carrier mobilities up to 0.4 cm2/V s on flexible plastic substrates and 1 cm2/V s on silicon substrates.