This paper presents a review on crystalline silicon bifacial PV performance characterisation and simulation to facilitate new research developments for bifacial PV technology and implementation in the global market.

In this paper we summarize the status of bifacial photovoltaics (PV) and explain why the move to bifaciality is unavoidable when it comes to e.g., lowest electricity generation costs or agricultural PV (AgriPV). Bifacial modules—those that are sensitive to light incident from both sides—are finally available at the same price per watt peak as their standard monofacial equivalents. The reason for this is that bifacial solar cells are the result of an evolution of crystalline Si PV cell technology and, at the same time, module producers are increasingly switching to double glass modules anyway due to the improved module lifetimes, which allows them to offer longer product warrantees. We describe the general properties of the state-of-the-art bifacial module, review the different bifacial solar cells and module technologies available on the market, and summarize their average costs. Adding complexity to a module comes with the increase of possible degradation mechanisms, requiring more thorough testing, e.g., for rear side PID (Potential Induced Degradation). We show that with the use of bifacial modules in fixed tilt systems, gains in annual energy yield of up to 30% can be expected compared to the monofacial equivalent. With the combination of bifacial modules in simple single axis tracking systems, energy yield increases of more than 40% can be expected compared to fixed tilt monofacial installations. Rudimentary simulations of bifacial systems can be performed with commercially available programs. However, when more detailed and precise simulations are required, it is necessary to use more advanced programs such as those developed at several institutes. All in all, as bifacial PV—being the most cost-effective PV solution—is now becoming also bankable, it is becoming the overall best technology for electricity generation.

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In this study, we investigate the metallization‒induced recombination losses of high efficiency bifacial n‒type and p‒type crystalline Si solar cells. From the experimental data, we found that the most efficiency limiting parameter by the screen‒printed metallization is the open‒circuit voltage (VOC) of the cells. We investigated the mechanism responsible for this loss by varying the metallization fraction on either side of the cell and determined the local enhancement in the dark saturation current density beneath the metal contacts (J0(met)). Under optimum fabrication conditions, the J0(met) at metal‒p+ (boron) emitter interfaces was found to be significantly higher compared with the values obtained for metal‒n+ emitters. A two‒dimensional simulation model was used to get further insight into the recombination mechanism leading to these VOC losses. The model assumes that metal contacts penetrate (or etch) into the diffused region following the firing process and depassivate the interface. Applying this model to our n‒type solar cells with a boron p+ emitter, we demonstrated that the simple loss of passivated area beneath the metal contact cannot explain the degradation observed in the VOC of the cell without considering a significant etching or metal penetration into the emitter region. Copyright © 2014 John Wiley & Sons, Ltd.

We have investigated the gettering of transition metals in multicrystalline silicon wafers during a phosphorus emitter diffusion for solar cell processing. The results show that mainly regions of high initial recombination lifetime exhibit a significant lifetime enhancement upon phosphorus diffusion gettering. Nevertheless, transition metal profiles extracted by secondary ion mass spectrometry in a region of low initial lifetime reveal significant gradients in Cr, Fe, and Cu concentrations towards the surface after the emitter diffusion, without exhibiting a significant enhancement in the lifetime. In a region of higher initial lifetime, however, diminutive concentration gradients of the transition metal impurities are revealed, indicating a significantly lower initial concentration in these regions. From spatial maps of the dislocation density in the wafers, we find that lifetime enhancements mainly occur in regions of low dislocation density. Thus, it is believed that a generally higher concentration of transition metals combined with an impurity decoration of dislocations in regions of high dislocation density limit the initial lifetime and the lifetime after the phosphorus diffusion, in spite of the notable gettering of transition metal impurities towards the surface in these regions. Furthermore, after a hydrogen release from overlying silicon nitride layers, we observe that only regions of low dislocation density experience a significant lifetime enhancement. This is attributed to impurity decoration of the dislocations in the regions of both high dislocation density and high transition metal impurity concentration, reducing the ability of hydrogen to passivate dislocations in these regions.