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Highly unsaturated π-rich carbon skeletons afford versatile tuning of structural and optoelectronic properties of low-dimensional carbon nanostructures. However, methods allowing more precise chemical identification and controllable integration of target sp-/sp 2 -carbon skeletons during synthesis are required. Here, using the coupling of terminal alkynes as a model system, we demonstrate a methodology to visualize and identify the generated π-skeletons at the single-chemical-bond level on the surface, thus enabling further precise bond control. The characteristic electronic features together with localized vibrational modes of the carbon skeletons are resolved in real space by a combination of scanning tunneling microscopy/spectroscopy (STM/STS) and tip-enhanced Raman spectroscopy (TERS). Our approach allows single-chemical-bond understanding of unsaturated carbon skeletons, which is crucial for generating low-dimensional carbon nanostructures and nanomaterials with atomic precision.

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We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

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