We study the structural, electronic, and magnetic properties of the antiferromagnetic-layered oxyarsenide (LaO)­MnAs system from the first-principle calculation. The increasing Hubbard energy (U) in the Mn 3d orbital induces the increasing local-symmetry distortions (LSDs) in MnAs4 and OLa4 tetrahedra. The LSD in MnAs4 tetrahedra is possibly promoted by the second-order Jahn–Teller effect in the Mn 3d orbital. Furthermore, the increasing U also escalates the bandgap (E g) and the magnetic moment of Mn (μMn). The value of U = 1 eV is the most appropriate by considering the structural properties. This value leads to E g and μMn of 0.834 eV and 4.31 μB, respectively. The calculated μMn is lower than the theoretical value for the high-spin state of Mn 3d (5 μB) due to the hybridization between Mn 3d and As 4p states. However, d xy states are localized and show the weakest hybridization with valence As 4p states. The Mott-insulating behavior in the system is characterized by the E g transition between the valence and conduction d zx /d zy states. This work shows new physical insights for advanced functional device applications, such as spintronics.

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