Mn dissolution is the main drawback of LiMn2O4 cathodes, leading to capacity fading and anode poisoning. It is well known that improved capacity/cycling performances have been obtained by the Al2O3 coating. It is less clear what is the effect of the coating from the point of view of the fundamental processes occurring within the active material and on the interface with the active material, especially during the first cycle, when a dynamical interaction at a high voltage with an electrolyte and a binder leads to the formation of a passivation layer. We present here the close comparison of coated and uncoated electrodes’ X-ray absorption analysis at the interface during the measurements of several charged/discharged states of the electrode. The Al2O3 coating is significantly effective for stopping the high voltage instability of the battery, especially, when the Mn–O couple reacts with organic species, limiting Mn capture and the electrolyte reaction with the oxide surface. In the low-voltage discharge, on the other hand, more complex structure/electronic modifications occur. The presence of the coating limits disproportionation, preventing a general corrosion with dissolution of the Mn2+ species, and hence improves the electrode performance. From the structural point of view, the signatures of the transformations and a reversible modification of the surface character of the nanoparticles from a spinel to a defective phase are observed, while no charge transfer between the coating and manganese oxide is found. The role of nonthermodynamic interphase formation by means of proton transfer is enhanced for the coated oxide particles.

It is well known that the Al2O3 coating of the LiMn2O4 cathodes leads to improvement of the performance of these electrodes. However, the effect of the coating on the fundamental processes occurring on the interface with the active material which results in the formation of the solid permeable interphase is yet to be investigated. These effects should be more pronounced in the first cycle when a dynamic interaction of the active material at high voltage with the electrolyte and binder leads to the formation of this passivation layer. Here, we present a detailed investigation of the solid permeable interphase formation in alumina-coated and uncoated LiMn2O4 electrodes using X-ray absorption spectroscopy and analysis on the electrodes at the predesigned charging/discharging states. We demonstrate that the alumina coating leads to modification of the solid permeable layer and its dynamics. We also discuss the possible influences of interface modifications via coating on the battery performance.

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Cd is categorized as a toxic material with restricted use in electronics as there are inherent problems of treating waste and convincing consumers that it is properly sealed inside without any threat of precarious leaks. Apart from toxicity, band-gap of CdS is about 2.40–2.50 eV, which results significant photon loss in short-wavelength range which restricts the overall performance of solar cells. Thin film of Zn(O,S) is a favorable contender to substitute CdS thin film as buffer layer for CuInGaSe2 (CIGS), CuInGa(S,Se)2 (CIGSSe), Cu2ZnSn(S,Se)4 (CZTSSe) Cu2ZnSnSe4 (CZTSe), Cu2ZnSnS4 (CZTS) thin film absorber material based photovoltaic due to it made from earth abundant, low cost, non-toxic materials and its ability to improve the efficiency of chalcogenide and kesterite based photovoltaic due to wider band-gap which results in reduction of absorption loss compared to CdS. In this review, apart from mentioning various deposition technique for Zn(O,S) thin films, changes in various properties i.e., optical, morphological, and opto-electrical properties of Zn(O,S) thin film deposited using various methods utilized for fabricating solar cell based on CIGS, CIGSSe, CZTS, CZTSe and CZTSSe thin films, the material has been evaluated for all the properties of buffer layer (high transparency for incident light, good conduction band lineup with absorber material, low interface recombination, high resistivity and good device stability).

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