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The prepared starting materials has composition Cd0.60Se0.40 was used to fabrication of thin films. Cadmium selenide thin films of different thickness (400nm-700nm) deposited by electron beam evaporation technique on well cleaned glass substrate at substrate temperature 300 K. The X-ray diffraction pattern confirmed that the prepared thin films of composition Cd 0.60Se 0.40 has polycrystalline in nature. The resistivity, conductivity, Hall mobility, carrier concentration of the deposited films were calculated of different films thickness..

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