A study of experimental data reveals that the bulk modulus of chalcogenides and pnictides based chalcopyrites (AIIBIVC2 V and AI BIIIC2 VI) can be explained by a simple scaling rule that rely only on the crystal ionicity, ionic charge product, and the melting temperature. PVV theory of crystal ionicity, temperature dependence of elasticity and product of ionic charge theory are taken into account for the study. Based on this result, a simple microhardnessbulk modulus relation is applied to evaluate the microhardness of the complex compounds; which correspond well with the experimental data and other published results. The proposed findings support in the modeling of emerging semiconductor materials and even understanding of their mechanical properties for optoelectronics, photovoltaic, electromagnetic (EM) screening, and spintronic applications. PACS: 62.20.-x; 62.20.Qp

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The concept of ionicity has been developed by Phillips and Van Vechten from the dielectric analysis of the semiconductors and insulators to evaluate various bond parameters of binary tetrahedral (AIIBVI and AIIIBV) semiconductors. In this paper, an advance hypothesis of average atomic number of the elements in a compound has been used to evaluate intrinsic electronic and optical parameters such as ionic gap (Ec), average energy gap (Eg), crystal ionicity (fi) and dielectric constant (ϵ) of binary tetrahedral semiconductors.

The dielectric interpretation of crystal ionicity evolved by Phillips and Van Vechten (P.V.V) has been utilized to evaluate various ground state properties for broad range of semiconductors and insulators. Although, the relevance of P.V.V dielectric theory has been restricted to only simple ANB8-N structured compounds, which have a particular bond. Levine has broadened P.V.V. theory of ionicity to multiple bond and complex crystals and evaluated many bond parameters for ternary tetrahedral semiconductors. Some other researchers have extended Levine’s work with a concept of ionic charge product and nearest neighbour distance to binary and ternary tetrahedral crystals to evaluate the ground state properties. In this paper, a new hypothesis of average atomic number of the elements in a compound has been used to understand the some electronic and optical properties such as ionic gap (Ec), average energy gap (Eg), crystal ionicity (fi), electronic susceptibility (χ), and dielectric constant (ϵ) of ternary tetrahedral (AIIBIV and AIBIII) semiconductors. A reasonably acceptable agreement has been noticed between our evaluated values and other researchers reported values.

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