Simultaneously obtaining high efficiency and deep blue emission inorganic light emitting diodes (OLEDs) remains a challenge. To overcome the demands associated with deep blue thermally activated delayed fluorescence (TADF) emitters, two deep blue TADF materials namely, DBA-BFICz and DBA-BTICz, are designed and synthesized by incorporating oxygenbridged boron (DBA) acceptor with heteroatoms, oxygen and sulphur-based donors, BFICz and BTICz, respectively. Both TADF materials show deep blue photoluminescence emissions below 450 nm by enhancing the optical band gap over 2.8 eV through deeper highest occupied molecular orbital (HOMO) level of heteroatom based donor moieties. At the same time, the photoluminescence quantum yields (PLQYs) of both TADF materials remain over 94%. The TADF device with DBA-BFICz as an emitter exhibits a good external quantum efficiency (EQE) of 33.2%. Since both new TADF materials show deep blue emissions and high efficiencies, hyperfluorescence (HF) OLED devices are fabricated using ν-DABNA as a fluorescence dopant. DBA-BFICz as a TADF sensitized host in HF-OLED reveals an outstanding EQE of 38.8% along with narrow full width at half maximum of 19 nm in the bottom emission pure blue OLEDs. This study provides an approach to develop deep blue TADF emitters for highly efficient OLEDs.

Here, we report efficient and stable indium phosphide (InP) based inverted red quantum dot light-emitting diodes (QLEDs) using a new high mobility and deep HOMO level hole transport layer (HTL) and an optimized sol−gel ZnMgO layer. A new hole transport material, DBTA, containing rigid dibenzothiophene and tertiary amine units has been designed with high hole mobility and a deep HOMO level to inject holes faster into the InP-QDs. Also, to decrease the electron transporting property of the ZnMgO NPs, a sol−gel ZnMgO layer with optimum magnesium content (17%), low-temperature annealing (180 °C), and a selfaging process is used on the transparent electrode. The high mobility DBTA and an optimized sol−gel Zn 0.83 Mg 0.17 O layer with the self-aging process are responsible for achieving good charge balance and suppressing nonradiative losses in InP-QLED. The fabricated QLED with DBTA and optimized sol− gel Zn 0.83 Mg 0.17 O exhibited an external quantum efficiency of 21.8%, current efficiency of 23.4 cd/A, and operating lifetime (LT 50 ) of 1095 h at 1000 cd/m 2 .

In the last few years, electron-deficient materials have been actively researched for application in organic light-emitting diode (OLED) as dopant and electron-transporting materials. The boron-containing materials are interesting as they give good emissive properties in solid state with an electron-accepting character. Recently, many boron-containing materials are used as emissive materials for thermally activated delayed fluorescence (TADF) OLED applications. In this review, boron acceptor-based push-pull small molecules used for application in blue TADF OLEDs are reviewed, covering their different types of acceptor, molecular design, structure-property relation, material properties, and device properties. Also, the importance of boron acceptors to address the key issue of blue TADF OLEDs is discussed.

In this paper, we report two new phenanthroline-based compounds, 1,4-bis­(2-phenyl-1,10-phenanthrolin-4-yl)­benzene (p-bPPhenB) and 1,3-bis­(2-phenyl-1,10-phenanthrolin-4-yl)­benzene (m-bPPhenB), for the charge generation unit of tandem organic light-emitting diodes (OLEDs). These two compounds exhibited high electron mobility of (5.8–4.4) × 10–3 cm2/(V s), a very small injection barrier at the p–n junction interface, a high glass transition temperature of 123.9–182.1 °C, and exceptionally good operational stability. Because of such excellent characteristics, a single-stack red phosphorescent OLED (PhOLED) with p-bPPhenB showed a low driving voltage (2.7 V) and significantly improved maximum power efficiency (56.8 lm/W), external quantum efficiency (30.8%), and device lifetime (LT95, 130 h) compared to those of the control device using bathophenanthroline (Bphen) (3.7 V, 39 lm/W, 27.1%, and 13 h). Furthermore, a two-stack (tandem) red PhOLED using p-bPPhenB in the charge generation unit exhibited superior charge generation as well as electron transport properties and excellent device performances (5.0 V, 54.0 lm/W, 56.1%) compared to those of the tandem device using Bphen (6.2 V, 45.2 lm/W, 53.3%).