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Hot-carrier, inducing source-drain current (I DS ) increase in highvoltage p-channel lateral DMOS (LDMOS) transistors, is investigated. At low gate voltage (V GS ) and high drain voltage (V DS ), electrons are injected into the gate oxide, creating negative fixed oxide charges and interface-states above the accumulation region and the channel towards the source side (Figure 1). The source drain current (I DS ) increase leads to threshold voltage shift (V TH 0V) and for higher stress conditions a drain-source leakage can be observed. The effect has been analyzed combining experimental data and TCAD simulations. For the first time recovery effect after hot carrier stress even at low temperature is reported.

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