Articles you may be interested inEffect of electrical stress on Au/Pb (Zr0.52Ti0.48) O3/TiOxNy/Si gate stack for reliability analysis of ferroelectric field effect transistors Appl. Phys. Lett. 105, 152907 (2014); 10.1063/1.4897952 Impact of total ionizing dose irradiation on electrical property of ferroelectric-gate field-effect transistor Electrical investigations on metal/ferroelectric/insulator/semiconductor structures using poly[vinylidene fluoride trifluoroethylene] as ferroelectric layer for organic nonvolatile memory applications Fabrication and characterization of metal-ferroelectric ( Pb Zr 0.53 Ti 0.47 O 3 ) -Insulator ( Y 2 O 3 )semiconductor field effect transistors for nonvolatile memory applications

No abstract

Abstract. The present paper deals with the modeling of high resonance frequency electrostatically actuated MEMS accelerometer having out-of-plane sensing axis. The accelerometer is based on folded beam support and comb structure configuration. Capacitance change phenomenon is used to determine the device acceleration. Effect of different structural parameters on the device performance is analyzed and the simulation is carried out on COMSOL Multiphysics, a strong 3D modeling software. The design is based on standard SOI-MUMP'S technology and with in-house fabrication capabilities. SOI-MUMP'S technology is preferred because of its outstanding performance and ease of fabrication.