The use of organic semiconducting material sensors as total dose radiation detectors is proposed, wherein the change in conductivity of an organic material is measured as a function of ionizing radiation dose. The simplest sensor is a resistor made using organic semiconductor. Furthermore, for achieving higher sensitivity, organic field effect transistor ͑OFET͒ is used as a sensor. A solution processed organic semiconductor resistor and an OFET were fabricated using poly 3-hexylthiophene ͑P3HT͒, a p-type organic semiconductor material. The devices are exposed to Cobalt-60 radiation for different total dose values. The changes in electrical characteristics indicate the potential of these devices as radiation sensors.

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This paper reports the performance enhancement of nanocomposite thin film transistors fabricated using ZnO dispersed in p-type polymer, poly 3-hexylthiophene (P3HT). The ZnO nanostructures considered here are nanorods (300–500 nm), that were deposited in the high temperature zone during vapor phase deposition involving carbothermal reduction of solid zinc precursor. Organic Thin Film Transistors (OTFTs) based on the dispersion of these ZnO nanostructures in the p-type organic semiconductor, P3HT, show a mobility enhancement by 10 times for the organic–inorganic composite (~ 4 × 10-3 cm2/V s) compared to its pristine state (~ 4 × 10-4 cm2/V s). The results presented here show a great promise for the performance enhancement of p-type solution processable FETs.