Memristors show great potential for memory applications due to their high scalability and reliability. Memristor is a fourth basic electrical circuit element which gives relationship between the flux and charge. TiO 2 is used as an active layer for the memristor and prepared by sol-gel method. Al/TiO 2 /Ag memristor device has been fabricated successfully and characterized by current-voltage (I-V) measurements. The non-linear I-V plot with hysteresis loop has been observed, which is a fingerprint of memristor. The retention behavior of the device has been witnessed from the current time plots. The device shows good stability over a long period of time. Thus, the results indicate that the TiO 2 is a good candidate for memory device applications.

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